It is shown that interface trap states have pronounced effects on carrier transport and parameter extraction from top-gated InAs nanowire field effect transistors NWFETs . Due to slow surface state charging and discharging, the NWFET characteristics are time dependent with time constants as long as 45 s. This is also manifested in a time-dependent extrinsic transconductance that severely affect...

Photoinduced carrier dynamics in a sequence of InGaN/GaN multiple quantum wells (MQWs) are studied by employing steady state and ultrafast spectroscopy at room temperature. Time-resolved photoluminescence (PL) measured short carrier lifetimes of ,140 ps at room temperature. Steady state differential transmission was used to measure the in-well field screening due to the photoinjected carriers. ...

Background and Objectives: Beta-thalassemia continues to be a cause of significant burden to the society particularly in the poorer developing countries. Although sophisticated methods of screening have become available, a hunt for a cheap, rapid, objective screening method still remains elusive. Thus, the objectives are to study the validity of Naked-Eye-Single-Tube-Osmotic-Fragility-Test (NES...