The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 Å plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=...

If a tangle, K ⊂ B, has no planar, meridional, essential surfaces in its exterior then thin position for K has no thin levels.

We address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO3 on the band insulator SrTiO3 along the pseudo cubic [111] direction. While in general the metallic LaNiO3 film can effectively screen this polarity mismatch, we establish that in the ultra-thin limi...

Pentacene-based organic thin-film transistors (OTFTs) were fabricated on several types of flexible substrate: commercial photo paper, ultra-smooth specialty paper and ultra-thin (100 μM) flexible glass. The transistors were fabricated entirely through dry-step processing. The transconductance and field-effect mobility of OTFTs on photo paper reached values of ∼0.52 mS m(-1) and ∼ 0.1 cm(2) V (-...

PRODUCT DESCRIPTION The AD688 is a high precision ±10 V tracking reference. Low tracking error, low initial error and low temperature drift give the AD688 reference absolute ±10 V accuracy performance previously unavailable in monolithic form. The AD688 uses a proprietary ion-implanted buried Zener diode, and laser-waferdrift-trimming of high stability thin-film resistors to provide outstanding...

A technique was developed to deposit GaN on a Si(1 1 1) substrate by a four-step process in a single reactor: formation of ultra-thin oxide, conversion to an oxynitride via NH3 exposure at the onset of growth, low-temperature MOCVD of GaN, followed by HVPE of GaN. It was found that this oxynitride compliant layer served to relieve stress at the GaN/Si interface as well as protect the Si substra...

A desired reflectance profile versus frequency (wavenumber) can be directly Fourier transformed into the index of refraction profile as a function of thickness which would produce the desired spectral reflectance profile. This tool has existed for some years now but does not seem to be in common use. This paper lays out some of the principles to aid in making the process more understandable, in...

The focus of this thesis is to analyze cost trends and government incentives in the California PV market during 2007-2008. The data show that pre-rebate system costs increased in California during this time period and that this was driven by a surge in worldwide module cost. Systems employing thin film technology did not exhibit a downward impact on cost, which contradicts historical and techno...

We report on the stepwise generation of layered nanostructures via electron beam induced deposition (EBID) using organometallic precursor molecules in ultra-high vacuum (UHV). In a first step a metallic iron line structure was produced using iron pentacarbonyl; in a second step this nanostructure was then locally capped with a 2-3 nm thin titanium oxide-containing film fabricated from titanium ...