نتایج جستجو برای: transistor characteristic

تعداد نتایج: 193247  

2011
Jocelyn Sabatier Huy Cuong Nguyen Christophe Farges Jean-Yves Deletage Xavier Moreau Franck Guillemard Bernard Bavoux

The thermal behavior of a power transistor mounted on a dissipator is considered in order to estimate the transistor temperature junction using a measure of the dissipator temperature only. The thermal transfers between the electric power applied to the transistor, the junction temperature, and the dissipator temperature are characterized by two fractional transfer functions. These models are t...

2012
M. Sinduja G. Sathiyabama

This paper describes a transistor sizing methodology for both analog and digital CMOS circuits. Various techniques are used for power optimization in CMOS VLSI circuits. Transistor sizing is one of the important techniques for the determination of circuit performance. The aim of the power optimization is to minimize the power and power-delay product or the energy consumption of the circuit. Thu...

2014
O. Anjaneyulu A. Veena C. V. Krishna Reddy

In this paper, a novel low power pulsed flip-flop (PFF) using self-controllable pass transistor logic is presented. The pulse generation logic comprising of two transistor AND gate is used in the critical path of the design for improved speed and reduced complexity. In the D to Q path inverter is removed and the transistor is replaced with pass transistor logic. The pass transistor is driven by...

2007
M. G. Vavilov I. L. Aleiner L. I. Glazman

We develop a theory of nonlinear response to an electric field of a two-dimensional electron gas 2DEG placed in a classically strong magnetic field. The latter leads to a nonlinear current-voltage characteristic at a relatively weak electric field. The origin of the nonlinearity is twofold: the formation of a nonequilibrium electron distribution function and the geometrical resonance in the int...

1998
J. L. Huber J. Chen J. A. McCormack C. W. Zhou

We propose and demonstrate both a binary and ternary adder circuit based on a resonant tunneling diode (RTD) and a bipolar transistor. The basic switching cell consists of an RTD in series with the base of a bipolar transistor. The RTD is used to set a threshold voltage for the switching of the transistor.

1999
Tong Xiao Malgorzata Marek-Sadowska

In this paper we consider transistor sizing to reduce crosstalk. First, crosstalk noise dependency on wire width, wire spacing, driver and receiver sizes are discussed, and validated by experiments. Then transistor sizing for timing and noise is discussed and solved using optimization techniques. Experimental results suggest that crosstalk violations can be removed by transistor sizing with ver...

2014
Zhiqiang Fang Hongli Zhu Wenzhong Bao Colin Preston Zhen Liu Jiaqi Dai Yuanyuan Li Liangbing Hu

Transparent paper made of cellulose has attracted increased interest in the scientic community because it enables lighter, cheaper, more exible, and environmentally benign electronics of the future. The ability to modulate the dimension of cellulose bers in the nanoscale and microsized range by advanced processes enables paper to possess a tailored light scattering effect while maintaining h...

2004
M. Gerding

A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7 V at 50. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become fo...

2015
S. Sekar

In this paper, Adomian Decomposition Method (ADM) is used to study the linear time-invariant transistor circuit. The results obtained using Adomian Decomposition Method and the methods taken from the literature [5] were compared with the exact solutions of the linear time-invariant transistor circuit. It is found that the solution obtained using the Adomian Decomposition Method is closer to the...

2005
C. Sampedro F. Gamiz

We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor sDGSOId operated as a velocity modulation transistor sVMTd and as a conventional field effect transistor sFETd. Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modula...

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