نتایج جستجو برای: thin film circuit
تعداد نتایج: 297299 فیلتر نتایج به سال:
We introduce and study a new 3d Topological Field Theory which can be associated to any compact real manifold X. This TFT is analogous to the 2d A-model and reduces to it upon compactification on an interval with suitable boundary conditions. It plays a role in 3d mirror symmetry as well as in the physical approach to the geometric Langlands duality. A similar TFT can be defined in four dimensi...
Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. Recently Huang, Rosakis and co-workers [Huang, Y., Ngo, D., Rosakis, A.J., 2005. Non-uniform, axisymmetric misfit strain: in thin films bonded on plate substrates/substrat...
چکیده ندارد.
a cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. the substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. the al/ cu multilayer film was deposited on the glass substrate at the following conditions: working g...
The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of...
We report direct observation of a "Pac-Man" like coarsening mechanism of a self-supporting thin film of nickel oxide. The ultrathin film has an intrinsic morphological instability due to surface stress leading to the development of local thicker regions at step edges. Density functional theory calculations and continuum modeling of the elastic instability support the model for the process.
Article history: Received 11 January 2012 Received in revised form 27 March 2012 Accepted 25 April 2012 Available online 26 May 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.04.017 ⇑ Corresponding author. E-mail address: [email protected] (A. Cerdeir In this work we present a procedure for modeling the characteristics of amorphous oxide sem...
The residual stresses of the thin-walled injection molding are investigated in this study. It was realized that the behavior of residual stresses in injection molding parts was affected by different process conditions such as melt temperature, mold temperature, packing pressure and filling time. The layer removal method was used to measure the residual stresses at a thin-walled test sample by a...
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