نتایج جستجو برای: thin film circuit

تعداد نتایج: 297299  

2006
Josephine Bea Chang Chenming Hu Josephine B. Chang Amanda Murphy Jason Lee

2016
Agnès Tixier-Mita Satoshi Ihida Bertrand-David Ségard Grant A. Cathcart Takuya Takahashi Hiroyuki Fujita Hiroshi Toshiyoshi

2010
Anton Kapustin Ketan Vyas

We introduce and study a new 3d Topological Field Theory which can be associated to any compact real manifold X. This TFT is analogous to the 2d A-model and reduces to it upon compactification on an interval with suitable boundary conditions. It plays a role in 3d mirror symmetry as well as in the physical approach to the geometric Langlands duality. A similar TFT can be defined in four dimensi...

2007
D. Ngo X. Feng Y. Huang

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. Recently Huang, Rosakis and co-workers [Huang, Y., Ngo, D., Rosakis, A.J., 2005. Non-uniform, axisymmetric misfit strain: in thin films bonded on plate substrates/substrat...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تهران 1387

چکیده ندارد.

Journal: :journal of nanostructures 2013
p. balashabadi z. assadollahi m. ghasemi h. bakhtiari e. jafari-khamse

a cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. the substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. the al/ cu multilayer film was deposited on the glass substrate at the following conditions: working g...

Journal: :Microelectronics Reliability 2002
Adelmo Ortiz-Conde Francisco J. García-Sánchez Juin J. Liou Antonio Cerdeira Magali Estrada Y. Yue

The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of...

Journal: :Nano letters 2017
X X Yu A Gulec A Yoon J M Zuo P W Voorhees L D Marks

We report direct observation of a "Pac-Man" like coarsening mechanism of a self-supporting thin film of nickel oxide. The ultrathin film has an intrinsic morphological instability due to surface stress leading to the development of local thicker regions at step edges. Density functional theory calculations and continuum modeling of the elastic instability support the model for the process.

Journal: :Microelectronics Reliability 2012
Antonio Cerdeira Magali Estrada Blanca S. Soto-Cruz Benjamín Iñíguez

Article history: Received 11 January 2012 Received in revised form 27 March 2012 Accepted 25 April 2012 Available online 26 May 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.04.017 ⇑ Corresponding author. E-mail address: [email protected] (A. Cerdeir In this work we present a procedure for modeling the characteristics of amorphous oxide sem...

2005
Tong-Hong Wang Wen-Bin Young

The residual stresses of the thin-walled injection molding are investigated in this study. It was realized that the behavior of residual stresses in injection molding parts was affected by different process conditions such as melt temperature, mold temperature, packing pressure and filling time. The layer removal method was used to measure the residual stresses at a thin-walled test sample by a...

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