Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon (Si) photonics practical technology. Applying silicon photonics to telecommunications further requires low insertion loss and polarization independence. We propose an integration concept for telecommunications based on Si and related materials and demonstrate monolithic integration of p...

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-onInsulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer usin...

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silico...

A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200 mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of -1.6 dB and a 3 dB bandwidth of 80 nm.

This paper explores the feasibility of integrating in-situ sensors onto the surface of a silicon wafer, with the objective of placing this wafer into a processing tool to obtain real time measurements. This technique has numerous benefits: increased measurement speed, reduced sensor introduction cost, and increased spatial and temporal information. Various sensors and sensor wafers have been de...

An overview is given of the modeling of the hydrodynamics, transport phenomena and chemical reactions in single-wafer LPCVD reactors, both at the macroscopic (reactor-scale) and a t the microscopic (feature-scale) level. Examples of modeling results f o r single-wafer silicon LPCVD from silane and tungsten LPCVD from tungsten hexafluoride and hydrogen a r e presented and comparisons a r e made ...

Electromagnetic radiation ranging in frequency from a few MHz to tens of GHz has been used to volumetrically heat silicon above 1000°C in only a few seconds. Typical power is <1.5 kW. This technique has successfully produced direct Si wafer-to-wafer bonds in only five minutes without the use of any intermediate glue layer. Infrared images indicate void free bonds, and knife-edge tests could not...

*Correspondence: Petra Granitzer , Institute of Physics, Karl-Franzens-University Graz, Universitaetsplatz 5, A-8010 Graz, Austria e-mail: [email protected] In this review, the fabrication of porous silicon/magnetic nanocomposite materials and their physical properties are elucidated. Especially, the investigation of the presented systems with respect to their magnetic properties is r...

It was reported that during silicon etching, silver was subjected to have a controversial role. Some researchers debate that silver protects silicon, and, at the same time, other ones confirm that silver catalyzes silicon underneath. In this paper, we give experimental results arguing the dual role that silver has during the formation of silicon nanostructures. We give a proof that the role of ...

Examining the interface between microscope probe and silicon wafer sheds light on how water collects in nanoconfined spaces machinery.