A comprehensive study of the silicon nanowire growth process has been carried out. Silicon nanowires were grown by plasma-assisted-vapor-solid method using tin as a catalyst. We have focused on the evolution of the silicon nanowire density, morphology, and crystallinity. For the first time, the initial growth stage, which determines the nanowire (NW) density and growth direction, has been obser...

To meet the performance requirements of low power mobile devices, a device with high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their subthreshold slope and transconductance compared MOSFETs. However, silicon-based have on-state current, which limits use in high-performance applications. overcome this limitation, using narrower band gap material like Ge can increas...

Silicon is one of the best known materials of our age, cheap and readily available, being the basic constituent of semiconductor electronics. It would therefore be highly desirable to broaden its utilization for, e.g. renewable energy applications. Recently, it has been proposed that Silicon may be engineered to be an efficient thermoelectric material for use in solid state devices[1, 2]. Altho...

Although the concept of constructing active optical waveguides in crystalline silicon has existed for over twenty years, it is only in the past few years that silicon photonics has been given serious attention as a displacing technology. Fueled by the predicted saturation of “Moore’s Law” within the next decade, universities and industries from all over the world are exploring the possibilities...

A thermo-morphic transition of a silicon nanowire (Si-NW) is investigated in vacuum and air ambients, and notable differences are found under each ambient. In the vacuum ambient, permanent electrical breakdown occurs as a result of the Joule self-heating arising from the applied voltage across both ends of the Si-NW. The resulting current abruptly declines from a maximum value at the breakdown ...

By the virtue of the nature of the vapor-liquid-solid (VLS) growth process in semiconductor nanowires (NWs) and their small size, the nucleation, propagation, and termination of stacking defects in NWs are dramatically different from that in thin films. We demonstrate germanium-silicon axial NW heterostructure growth by the VLS method with 100% composition modulation and use these structures as...

We experimentally demonstrate a microelectromechanically (MEMS) tunable photonic ring resonator add-drop filter, fabricated in a simple silicon-on-insulator (SOI) based process. The device uses electrostatic parallel plate actuation to perturb the evanescent field of a silicon waveguide, and achieves a 530 pm resonance wavelength tuning, i.e., more than a fourfold improvement compared to previo...

The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical and home automation systems. IoT-compatible processors or devices need larger integrated memory circuits, static random access (SRAM). design such a with fast times low leakage challenge. In this article, we have proposed 7T SRAM cell using an InGaAs-dual pocket-dual gate-tunne...

Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and highk/metal gate stack are demonstrated with high Ion/Ioff ratio (>10). At VDS = 0.75V, a record on-current of 20μA/μm is achieved due to higher tunneling rate in narrow tunnel gap In0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirmin...

Satellite altimetry is used to identify and characterize Pacific intraplate seamounts. The gravimetric amplitudes of seamounts appear to be related to the age difference between seafloor and seamounts; by inverting this relationship pseudo ages can be obtained for undated seamounts. These pseudo ages imply that excursions in seamount volcanism generally correlate with times of formation of larg...