We introduce a novel family of asymmetric dual-Vt SRAM cell designs that reduce leakage power in caches while maintaining low access latency. Our designs exploit the strong bias towards zero at the bit level exhibited by the memory value stream of ordinary programs. Compared to conventional symmetric high-performance cells, our cells offer significant leakage reduction in the zero state and in ...

On-chip decoupling capacitors (decaps) are widely used to reduce power supply noise. Typically, designs use NMOS decaps between standard-cell blocks and NMOS+PMOS decaps within the blocks. Starting at the 90nm CMOS technology node, the traditional decap designs may no longer be suitable due to increased concerns regarding thin-oxide gate leakage and electrostatic discharge (ESD) reliability. Th...

Classical methods of DOA estimation such as the MUSIC algorithm are based on estimating the signal and noise subspaces from the sample covariance matrix. For a small number of samples, such methods are exposed to performance breakdown, as the sample covariance matrix can largely deviate from the true covariance matrix. We invistigate DOA estimation performance breakdown. Specifically, we consid...

A bidirectional transient voltage suppressor (TVS) Zener diode was fabricated with abrupt junctions using the low-temperature epitaxy process. The effects of various electrostatic discharge (ESD) stresses on the electrical properties are demonstrated, such as the current­voltage (I­V) and 1/f noise power spectral density (PSD). Very sharp and uniform bidirectional multi-junctions result in good...

This paper investigates a new microphone array processing technique specifically for the purpose of speech enhancement and recognition. The main objective of the proposed technique is to improve the low frequency directivity of a conventional adaptive beamformer, as low frequency performance is critical in speech processing applications. The proposed technique, termed near-field adaptive beamfo...

The effect of gate – drain/source underlap ( Lun ) on a narrow band LNA performance has been studied , in 30 nm FinFET using device and mixed mode simulations. Studies are done by maintaining and not maintaining the leakage current (Ioff) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used...

A finite measurement time is at the origin of transient (sometimes called leakage) errors in nonparametric frequency response function (FRF) estimation. If FRF varies significantly over resolution experiment (= reciprocal time), then these transients (leakage) cause important bias and variance estimate. To decrease errors, several local modeling techniques have been proposed literature. This ar...

Fluorine (F) implantation with different dose post gate oxidation is used for investigating the performance of saddle-fin (S-Fin) array devices including gate-induced drain leakage (GIDL) and retention fail bit counts. Significantly lower retention fail counts of 35% were achieved in using a medium dosage of F implantation. Additional 18% retention fail count reduction was represented by F impl...

In this paper, we present a novel estimator for the SPP at each time-frequency point in the short-time Fourier transform (STFT) domain. Existing speech presence probability (SPP) estimators cannot perform quite reliably in nonstationary noise environment when applied to a speech enhancement task. To overcome this limitation, we propose a novel SPP estimation method. Firstly, the spectral outlie...