The metal oxide semiconductor field effect transistor is the building block of VLSI(Very Large Scale Industry).Minimum featrure size of the ICs has shurnk consideably over the time of several decades. This results in a chip with the same functionality in a smaller area, or chips with more functionality in the same area.As a consequence,the number of transistor has increased over time. When gate...

A closed-form expression for short-circuit power dissipation of CMOS gates is presented which takes short-channel effects into consideration. The calculation results show good agreement with the SPICE simulation results over wide range of load capacitance and channel length. The change in the short-circuit power, , caused by the scaling in relation to the charging and discharging power, , is di...

© 2009 Apinunt Thanachayanont et al. 243 ABSTRACT⎯A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with e...

Abstract— FinFet is evolved to overcome Moore's law limitations in nanometer regime. Transconductance circuit produces differential output currents, when differential input voltages are applied. A simple FinFet transconductance circuit structure modified from traditional MOSFET is proposed to preserve both area and power. The proposed design contributes a transconductance gain of 5.247 mA/v for...

A full-band Monte Carlo (MC) device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel metal-oxide-semiconductor fieldeffect transistor (MOSFET) structures. Simulated devices include a conventional MOSFET with a single source/drain implant, a lightly-doped drain (LDD) MOSFET, a silicon-on-insulator (SOI) MOSFET, and a MOSFET built on ...

The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS ...

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET’s down to 0.07 m channel lengths both at low and room temperatures.

This paper describes a new mixed-signal VLSI implementation of neural networks for low power and asynchronous operation. The linearised transconductance produces the synaptic function of multiplication, weight programming, and summation of synaptic currents for the neuron. The synapse circuit is designed with 8 transistors, by compensating the non-linearity of MOSFET resistance in the triode re...

In this paper, we report on the design and evolution of a 500W, 27 MHz Class E amplifier. It doubles the operating frequency of previous high efficiency amplifiers using MOSFET transistors in the TO-247 package. Device criteria, circuit design, and amplifier performance characteristics are presented and compared to a HEPA computer model.