Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented substrates has been studied. The surface morphology grown films was analyzed by scanning electron microscopy and atomic force microscopy, the crystal structure estimated X-ray grazing incidence diffraction, in-plane pole figures, reciprocal space mapping, photoluminescence spectroscopy. type, concentration,...

PdO, widely used in catalysis powder form for decades, has been predicted recently to be a Dirac semimetal. Synthesis of high-quality single crystals this material is thus great interest. Here, by using ozone-assisted molecular beam epitaxy, PdO thin films were grown on MgO (001) substrate. X-ray diffraction and transmission electron microscopy indicate the film $a/b$ axis oriented, with $c$ ly...

Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress hyperdoping Ga doped Ge using ion implantation. Thin film growth would be advantageous, allowing homoepitaxy undoped opening possibilities vertical Josephson junctions. Here, we present our studies on the...

GaAsBi has been researched as a candidate material for optoelectronic devices around two decades. Bi-induced localized states induce rapid rising of the valence band edge through anticrossing interaction, which profound effect on bandgap and spin–orbit splitting. The engineering possible, even with just few percent bismuth, makes an attractive THz emitters, telecommunication lasers, low noise p...

Abstract Advances in quantum technology may come from the discovery of new materials systems that improve performance or allow for functionality electronic devices. Lead telluride (PbTe) is a member group IV–VI family has significant untapped potential exploration. Due to its high electron mobility, strong spin–orbit coupling and ultrahigh dielectric constant it can host few-electron dots balli...