In recent research, we proposed a general framework of quantum-inspired multi-objective evolutionary algorithms(QMOEA) and gave one of its sufficient convergence conditions to Pareto optimal set. In this paper, two Q-gate operators, H2 gate and R&N2 gate, are experimentally validated as two Q-gate paradigms meeting to the convergence condition. The former is a modified rotation gate, and the la...

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

The dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor ~MOS! gate stacks was explored. Metal work functions on high-k dielectrics are observed to differ appreciably from their values on SiO2 or in vacuum. We applied the interface dipole theory to the interface between the gate and the gate dielectric of a MOS transistor and obtaine...

fuzzy rule-based classification system (frbcs) is a popular machine learning technique for classification purposes. one of the major issues when applying it on imbalanced data sets is its biased to the majority class, such that, it performs poorly in respect to the minority class. however many cases the minority classes are more important than the majority ones. in this paper, we have extended ...

In this work, we studied the gate breakdown mechanisms of p-GaN AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For first time, three different were observed and identified separately in same devices: metal/p-GaN junction breakdown, p-GaN/AlGaN/GaN passivation related breakdown. This method is an effective to determine mechanisms. The BD further confirmed scanning electron microsco...

As the gate oxide thickness decreases below 2 nm, the gate leakage current increases dramatically due to direct tunneling current. This large gate leakage current will be an obstacle to reducing gate oxide thickness for the high speed operation of future devices. A MOS transistor with Ta2O5 gate dielectric is fabricated and characterized as a possible replacement for MOS transistors with ultra-...

Page I. Gate Drive Requirements ................................................................................1 I. A Impact of the impedance of the gate drive circuit on switching losses............1 I. B Impact of the gate drive impedance on noise sensitivity.................................2 I. C Impact of gate drive impedance on "dynamic latching" ..................................2 I. D U...

Gate depletion and boron penetration through thin gate oxide place directly opposing requirements on the gate engineering for advanced MOSFET’s. In this paper, several important issues of deep-submicron CMOS transistor gate engineering are discussed. First, the impact of gate nitrogen implantation on the performance and reliability of deep-submicron CMOSFET’s is investigated. The suppression of...