TFET based label-free biosensors are fast, sensitive and more power efficient as compared to CMOS biosensors, which prone short channel effects (SCEs). However, literature is flooded with various that have become the reason of dilemma for researchers during pandemic situations like COVID-19. Therefore, in this work, a physically doped (PD), charge plasma (CP) electrically (ED) dielectric modula...

The gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology nodes. In particular, the junctionless transistors are scalable with reduced variability avoidance of steep source/drain junction formation by ion implantation. Here dual-gated p-type field effect transistor demons...

In this paper, we have performed the scaling of asymmetric junctionless (JL) SOI nanowire (NW) FET at 10 nm gate length (LG). To study device electrical performance various DC metrics like SS, DIBL, ION/IOFF ratio are discussed. Even 5 nm, has good properties with subthreshold swing (SS) = ~64 mV/dec, drain induced barrier lowering (DIBL) ~45 mV/V, and switching (ION/IOFF) ~106 shows a higher l...