نتایج جستجو برای: inp

تعداد نتایج: 4104  

2012
Mark-Daniel Gerngross Jürgen Carstensen Helmut Föll

: A process chain for a magnetoelectric device based on porous InP will be presented using only chemical, electrochemical, photoelectrochemical, photochemical treatments and the galvanic deposition of metals in high-aspect-ratio structures. All relevant process steps starting with the formation of a self-ordered array of current-line oriented pores followed by the membrane fabrication and a pos...

2014
Xingtian Yin Corsin Battaglia Yongjing Lin Kevin Chen Mark Hettick Maxwell Zheng Cheng-Ying Chen Daisuke Kiriya Ali Javey

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circu...

Journal: :The journal of physical chemistry. B 2005
J L Blackburn D C Selmarten R J Ellingson M Jones O Micic A J Nozik

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes ...

2009
M. Radosavljevic B. Chu-Kung S. Corcoran G. Dewey M. K. Hudait J. M. Fastenau J. Kavalieros W. K. Liu D. Lubyshev M. Metz K. Millard N. Mukherjee W. Rachmady U. Shah Robert Chau

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel...

ژورنال: :مهندسی برق مدرس 0
kamyar - saghafi shahed univ. mohammad kazeme moravvej-farshi tarbiat modares univ. vahid ahmadi tarbiat modares univ.

در این مقاله به بررسی نقش خواص ذاتی مواد نیمرسانای مرکب، از جمله اختلاف انرژی بین دره های l و در ماده، جرم مؤثر حامل و همچنین فرایندهای پراکندگی برمشخصه های انتقال الکترون در کانال مِسفِت می پردازیم. به علاوه، تأثیر ساختار مِسفِت بر مشخصه های انتقال الکترون را در افزاره مطالعه می کنیم. برای بررسی این موضوع ساختار مِسفِت ingaas تعبیه شده برروی بستر نیم عایق inp و ساختار مِسفِت inp را با روش مونت کارلو ...

Journal: :Optics express 2004
Tze-An Liu Masahiko Tani Makoto Nakajima Masanori Hangyo Kiyomi Sakai Shin-Ichi Nakashima Ci-Ling Pan

Photoconductive (PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H+) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H+ device (dosage of 10;15 ions/cm;2) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half ...

Journal: :Nanotechnology 2009
D D Cheng M J Zheng L J Yao S H He L Ma W Z Shen X Y Kong

Uniform and vertical indium-oxide nanotube (IONT) arrays embedded well in n-type InP single crystal have been successfully prepared in situ by porous InP-template-assisted chemical vapor deposition (CVD). This IONT/InP nanostructure reveals high sensitivity to humidity at room temperature, which is ascribed to the ultrahigh surface-to-volume ratio of this nanostructure and the large number of o...

1999
Chong-Yi Lee Meng-Chyi Wu Hung-Pin Shiao Wen-Jeng Ho

In this article, we report the growth and characterization of InAsP/InP strained single quantum well (SSQW), strained single quantum well (SSQW) stack, and strained multiple quantum well (SMQW) structures on (1 0 0)-oriented InP substrates grown by metalorganic chemical vapor deposition. Double-crystal X-ray di!raction, photoluminescence (PL) and transmission electron microscope (TEM) are used ...

Journal: :Communications materials 2021

Abstract The industrialization of quantum dot light-emitting diodes (QLEDs) requires the use less hazardous cadmium-free dots, among which ZnSe-based blue and InP-based green red dots have received considerable attention. In comparison, development QLEDs is lagging behind. Here, we prepare InP/ZnSe/ZnS with a diameter 8.6 nm. We then modify InP emitting layer by passivation various alkyl diamin...

Journal: :Nanotechnology 2011
K A Grossklaus J M Millunchick

Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method for creating and templating nanoscale InAs spikes by focused ion beam (FIB) irradiation of both homoepitaxial InAs films and heteroepitaxial InAs on InP substrates. These 'nanospikes' are created as ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید