We report the first realization of a charge injection transistor with a complementary collector. The device is implemented using InGaAs/InAlAs/InGaAs heterostructure material grown by molecular beam epitaxy. Real space transfer of hot electrons into the p-type collector leads to a luminescence signal arising from the recombination of the injected electrons with holes in the collector active reg...

InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission ef...

This paper demonstrates the design of high-isolation millimeter-wave monolithic integrated switches using MOCVD-grown InGaAs/InP PIN diodes as switching devices. W-band single-pole single-throw switch using double shunt diode topology allowed significant improvement of isolation while keeping insertion loss low. The SPST switch used two InGaAs PIN diodes and demonstrated better than 35dB isolat...

The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabricated on InP substrates and on GaAs substrates covered by a metamorphic buffer (MHEMT), are compared. Despite the high dislocation density in the bu...

Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is...

Optical modulation response experiments above threshold are carried out in ridge waveguide InGaAs and InGaAsN (N = 0:5%) in a temperature span of 10 C–80 C. The modulation traces are analyzed with a complete rate equation model that allows extraction of the resonance frequency and damping that are intrinsic to the carrier and photon processes occurring in the laser active region. This analysis ...

In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of t...

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