We report structural, magnetic, dielectric and thermal properties of single-crystal BaMnO(2.99) and its derivatives BaMn(0.97)Li(0.03)O(3) and Ba(0.97)K(0.03)MnO(3). The hexagonal 15R-BaMnO(2.99) perovskite phase is a known antiferromagnetic insulator that orders at a Néel temperature T(N) = 220 K. We find dilute Li and K doping change the ratio of cubic to hexagonal layers and cause drastic ch...

The demands of future CMOS devices require a new gate dielectric material with higher dielectric constant than SiO2. Aluminum oxide is one of the high-k materials and an interesting candidate. Thin Al2O3 layers have been deposited by pulsed laser deposition (PLD) from a mono-crystalline sapphire target. This deposition technique was chosen because of its flexibility and availability. Aluminum o...

Dual Metal Gate (DMG) technology was proposed to reduce the short channel effects (SCE’s) of double gate MOSFETs. But, DMG alone is not enough to rectify the problem of gate tunneling current due to thinning of oxide layer with device downscaling. So, the use of high-k dielectric as gate oxide is considered to overcome the gate tunneling effect. But, high gate dielectric thickness leads to high...

(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperat...

In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon subs...

We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface. Self-consistent numerical results reveal that accounting for wave function penetration into the gate dielectric causes the carrier distribution to be shifted closer to the gate dielectric. This effect incr...

cross linking of high density polyethylene (hdpe) was first performed via high energy10 mev electron beam (eb) irradiation. hdpe was also cross linked withdicumyle peroxide (dcp).the gel content of samples was determined by solvent extraction.degree of cross linking was evaluated by hot set apparatus; as well .in order to clarify the effectof nature of cross linking, correlation of electrical p...

High sensitivity measurements of the dielectric constant of solid oxygen are reported for 4 T 54 K. The results show unexpectedly large hysteresis effects for the temperature dependence of the dielectric constant in the and phases of oxygen on thermal cycling below 44 K. The behavior is compared to that observed for solid N2-Ar mixtures where the geometrical frustration of the molecular orienta...

A low-temperature specific heat study has been performed on the insulating giant dielectric constant material CaCu3Ti4O12 and two related compounds, Bi2/3Cu3Ti4O12 and La0.5Na0.5Cu3Ti4O12, from 0.6 to 10 K. From analyzing the specific heat data in a very low-temperature range, 0.6–1.5 K, and moderately low-temperature range, 1.5–5 K, in addition to the expected Debye terms, we observed signific...

A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost co...