An optimized multiple ̄oating guard ring structure is investigated for the ®rst time as an edge termination method for high voltage 4H-SiC planar devices. Simulations were performed to investigate SiC guard ring termination, and determine the optimum guard ring spacing for planar diodes with up to four ̄oating rings. Simulated optimized designs predicted breakdown values from 40% of the ideal b...

In this article, the authors show that geometric asymmetry in the layout of tunnel diodes yields asymmetry in the current-voltage I-V relationships associated with these diodes. Asymmetry improves diode performance. This effect is demonstrated for polysilicon–SiO2–Ti /Au and for Ni–NiO–Ni tunneling structures. For a polysilicon–SiO2–Ti /Au asymmetric tunneling diode ATD , sensitivity and I-V cu...

Silicon carbide (SiC) Schottky diodes 21 µm thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12 C and 16 O beams at incident energies between 5 and 18 MeV were used. The diode active-region depletion-thickness, the linearity of the response, energy resolution and signal rise-time were measured for differe...

Positive-intrinsic-negative (PIN) silicon diodes are commonly used in magnetic resonance imaging (MRI) coils to perform active or passive blocking and detuning, or to disable circuit functions. However, diode packages with large magnetic moments are known to cause image artifacts in high field MRI systems. In this study, diode packages with low magnetic moment were designed by compensating comp...

: We report on the design, fabrication and test of an integrated 320-360 GHz Sub-Harmonic Image Rejection Mixer (SHIRM) using planar Schottky diodes. The integrated circuit uses two separate anti-parallel pairs of diodes mounted onto a single quartz-based circuit. Measurement results give SSB receiver noise temperatures of 3300 K at 340 GHz, with an image rejection from 7.6 dB to 23 dB over the...

The 1/f noise investigation in nanoscale light-emitting diodes and lasers, based on GaAs and alloys, is presented here. Leakage and additional (to recombination through quantum wells and/or dots) nonlinear currents were detected and it was shown that these currents are the main source of the 1/f noise in devices studied. Keywords—Lasers, light-emitting diodes, quantum dots, quantum wells, 1/f n...

We simulate electron transport in ultra small mercury-cadmium-telluride n-n-n diodes using a hydrodynamic approach. A numerical staggered solution is employed to treat the coupled hydrodynamic and Poisson equations, where the spatial profiles of the main transport parameters within the diodes are analyzed including the Auger generationrecombination processes. Our numerical results show that, ev...

An electrically-activated phantom for evaluating diffuse optical imaging systems has been designed based on an array of semiconductor diodes which are used to heat a thermochromic dye embedded in a solidified polyester resin with tissue-like optical properties. The array allows individual diodes to be addressed sequentially, thus simulating the movement of a small volume of contrasting optical ...

Silicon Carbide and diamond Schottky barrier diodes (SBD) with an original and high efficiency termination are presented. The influences of termination parameters on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures by simulations. Design guidelines, based on simple analytical expressions, for ideal SBDs are included. Electrica...