نتایج جستجو برای: czochralski technique

تعداد نتایج: 611832  

2012
M. Forster A. Cuevas E. Fourmond F. E. Rougieux

Related Articles Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence J. Appl. Phys. 110, 113712 (2011) About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors J. Appl. Phys. 110, 114903 (2011) Silicon nanocrystals doped with substitutional or interstitial manganese Appl. Phys. Lett. 99, 193108 (2011) Effect...

2010
Yu. Zorenko P. Prusa V. Gorbenko

The detailed comparative analysis of luminescent and scintillation properties of the single crystalline films (SCF) of YAG:Ce garnet grown from melt-solutions based on the traditional PbO-based and novel BaO-based fluxes, and of a YAG:Ce bulk single crystal grown from the melt by the Czochralski method, was performed in this work. Using the Am (a-particle, 5.49 MeV) excitation we show that scin...

2007
A.Yu. Gelfgat

Preliminary results obtained by a code aimed to the analysis of three-dimensional (3D) instability of axisymmetric melt flows in Czochralski crucible are described. The CPU time and the computer memory necessary for the comprehensive 3D stability analysis by a second-order finite volume method are estimated. Basing on a certain experimental configuration, we give an example of the stability dia...

2015
H Talvitie

Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination le...

2013
Jyotirmay Banerjee K. Muralidhar

A mathematical model that explores the basic transport phenomena in a Czochralski process, their interaction and influence on the growth of high quality oxide crystals is presented. Rare earth garnets YAG and Nd-doped YAG are considered as representative oxide materials for the purpose of modeling and numerical simulation. The model proposed is evolutionary in time, and axisymmetric in space. A...

2006
HUAXIONG HUANG SHUQING LIANG

In this paper an optimal control approach for thermal stress reduction inside a Czochralski grown single crystal is presented. Using the lateral heat flux as a control variable, an optimal control formulation for minimizing thermal stress with a given crystal shape is derived. Since thermal stress is also affected by the lateral shape of crystals during growth, the level of the stress can be re...

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