نتایج جستجو برای: atmospheric pressure chemical vapor deposition

تعداد نتایج: 919037  

2012
M. K. Indika Senevirathna Sampath Gamage Ramazan Atalay Ananta R. Acharya A. G. Unil Perera Nikolaus Dietz Axel Hoffmann Liqin Su Andrew Melton Ian Ferguson

The influence of super-atmospheric reactor pressures (2.5–18.5 bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire (0001) templates by high-pressure chemical vapor deposition has been studied. The epilayers were analyzed by Raman, x-ray diffraction (XRD), and Fourier transform infrared reflectance spectrometry to determine the structural properties as wel...

2015
Li-Hua Yu Jun Wang Chi-Ming Lai

In recent years, water (R718) as a kind of natural refrigerant—which is environmentally-friendly, safe and cheap—has been reconsidered by scholars. The systems of using water as the refrigerant, such as water vapor compression refrigeration and heat pump systems run at sub-atmospheric pressure. So, the research on water boiling heat transfer at sub-atmospheric pressure has been an important iss...

2015
K. H. A. Bogart N. F. Dalleska G. R. Bogart Ellen R. Fisher

Articles you may be interested in Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy Monte Carlo simulation of surface kinetics during plasma enhanced chemical vapor deposition of SiO2 using oxygen/tetraethoxysilane chemistry Determination of the mechanical stress in plasma enhanced ...

Journal: :Journal of the Korean Institute of Electrical and Electronic Material Engineers 2005

2001
Jason T. Drotar Y.-P. Zhao G.-C. Wang

We examine, using (211)-dimensional Monte Carlo simulations, the roughening behavior of a reemission model for chemical vapor deposition. We find that, for pure first-order reemission, the interface roughens logarithmically with time and that the scaling exponents are, for most sets of conditions, close to the exponents of the Edwards-Wilkinson model (a50, b50, and z52). We compare our results ...

Journal: :Physical review letters 2001
Y P Zhao J T Drotar G C Wang T M Lu

Assuming a reemission model, we have studied, in detail, the effect of sticking coefficient on the morphology evolution in low-pressure chemical vapor deposition processes. We have shown that the surface morphology changes from a self-affine fractal to a columnarlike morphology with increasing sticking coefficient, which agrees qualitatively with experimental observations.

2012
Wenjing Fang Mildred Dresselhaus

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films...

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