The design, fabrication and spectroscopic characterization of ytterbium-doped Ta2O5 rib waveguide are described. The waveguides are fabricated on silicon substrates and operate in a single mode at wavelengths above 970 nm. The peak absorption cross-section was measured to be 2.75 × 10 cm at 975 nm. The emission spectrum was found to have a broad fluorescence spanning from 990 nm to 1090 nm with...

This paper presents a novel method to fabricate the horizontal frustum structure as a planar optical waveguide by using the proximity printing technique. A horizontal frustum optical waveguide with a both lateral and vertical taper structure was produced. The orthogonal and inclined masks with the diffraction effect were employed in lithography process. This method can precisely control each ho...

A novel angle detector for laser beams is designed in this paper. It takes advantage of grating coupling to couple the incident light into a slab waveguide; and, the incident light’s angle can be determined by reading the outputs of light detectors within the waveguide. This device offers fast-responding on-chip detection of laser beam’s angle. Compared to techniques based on quadrant photodiod...

How to enhance the optical nonlinearity of saturable absorption materials is an important question to improve the functionality of various applications ranging from the high power laser to photonic computational devices. We demonstrate the saturable absorption (SA) of VO2 film attributed to the large difference of optical nonlinearities between the two states of the phase-transition materials (...

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We present the design and fabrication of 2 μm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An an...

The microstructural changes associated with the formation of lithium tantalate waveguides after high repetition rate ultrafast laser inscription has been investigated by confocal micro-Raman experiments. While the laser beam focal volume is characterized by significant lattice damage, no reduction of Raman mode strength has been observed at the guiding region, suggesting the preservation of the...

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technologies. Despite significant advances in their fundamental aspects, the integration within scalable phot...

A compact mid-infrared channel waveguide laser is demonstrated in Cr:ZnS with a view to power scaling chromium laser technology utilizing the thermo-mechanical advantages of Cr:ZnS over alternative transition metal doped II-VI semiconductor laser materials. The laser provided a maximum power of 101 mW of CW output at 2333 nm limited only by the available pump power. A maximum slope efficiency o...

We report a large mode-area holmium-doped ZBLAN waveguide laser operating at 2.9 μm, which was pumped by a 1150 nm diode laser. The laser is based on ultrafast laser inscribed depressed cladding waveguides fabricated in uniformly rare-earth-doped bulk glass. It has a threshold of 28 mW and produced up to 27 mW of output power at an internal slope efficiency of approximately 20%.