We report a new approach to mimic basic functionalities of a neuron using a 1550 nm Vertical Cavity Surface Emitting Laser (VCSEL) which is based on the polarisation switching (PS) that can be induced in these devices when subject to polarised optical injection. Positive and negative all-optical threshold operations are demonstrated experimentally using external optical injection into the two o...

The silicon trackers of the ATLAS experiment at LHC (CERN) use optical links for data transmission. VCSEL arrays operating at 850 nm are used to transmit optical signals while PIN arrays are used to convert the optical signals into electrical signals. We investigate the feasibility of using the devices at the Super LHC (SLHC). We irradiated VCSEL and GaAs PIN arrays from three vendors and silic...

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection the polarization of the optical pump controls that of the spin-VCSEL. However, the addit...

The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows ...

Directly-modulated vertical-cavity surface-emitting lasers (VCSELs) are commonly used in short-reach optical interconnect applications. In order to enable efficient optical interconnect transceiver systems operating at data rates in excess of 20Gb/s, cosimulation environments which allow for the optimization of driver circuitry with accurate compact VCSEL models are necessary. This paper presen...

A modulated holding beam shining a VCSEL above threshold can improve modulation bandwidth by adjusting the semiconductor laser’s relaxation oscillation frequency. The improved modulation characteristics are accompanied by reduced damping rate. By choosing correct parameters, dynamical behavior of system and cavity solitons is changed.