In this paper, we have proposed the concept of 7Transistor SRAM. 7-Transistor SRAM has been designed to provide an interface with CPU and to replace DRAM in systems that require very low power consumption. The feature of 7Transistor SRAM like low power consumption and leakage current have been analyzed with 45nm technology. The comparative study and mathematical modeling have been proposed for ...

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of ...

An all-organic memory device based on a copper phthalocyanine (CuPc) thin-film transistor (TFT) using gold nanocrystals embedded in a polyimide gate dielectric is demonstrated. Both the gate dielectric and the active semiconductor layer are organic materials. Discrete gold nanocrystals are adopted as the charge storage medium. Under proper gate bias, gold nanocrystals are charged and discharged...

The behavior of two frequency divider circuits using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of three resistors (R) and two bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its current-voltage curve by suitably designing the resistances. We discuss a dynamic frequency divider, which is made of a R-BJT-NDR circuit, an in...

Abstract A multi-grooves barrier-etched structure between barrier layer and passivation is proposed in this paper to suppress the hot electron effect at gate edge on drain side p-GaN AlGaN/GaN high-electron-mobility transistor. In TCAD simulations, groove induces extra electric field concentration region AlGaN/SiN interface area, which can lower high peak temperature channel edge, leading allev...

A novel and robust scheme for radix-4 Booth scheme implemented in Carbon Nanotube Field-Effect Transistor (CNTFET) technology has been presented in this paper. The main advantage of the proposed scheme is its improved speed performance compared with previous designs. With the help of modifications applied to the encoder section using Pass Transistor Logic (PTL), the corresponding capacitances o...

Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three diffe...

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this pape...