In this work, a nanolayer of titanium nitride which produced by the magnetron sputtering system is synthesized. Moreover the effect of plasma parameters on the electron temperature is studied. Electron temperature has a significant effect on the plasma coating system properties. The results show that, increasing the working pressure and nitrogen ratio in the system causes decreasing electron te...

Titanium nitride (Ti-N) thin films are electrically and thermally conductive have high hardness corrosion resistance. Dense defect-free Ti-N been widely used in the surface modification of cutting tools, wear resistance components, medical implantation devices, microelectronics. In this study, were deposited by power pulsed magnetron sputtering (HPPMS) their plasma characteristics analyzed. The...

Morphology evolution of the multicomponent metallic glass film obtained by radio frequency (RF) magnetron sputtering was investigated in the present work. Two modes of metallic glass sputtering were distinguished: smooth film mode and clustered film mode. The sputtering parameters, which have the most influence on the sputtering modes, were determined. As a result, amorphous Ni-Nb thin films wi...

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range" (1997). Faculty Publications from the Department of Electrical and Computer Engineering. 64. Spectroscopic ellipsometry over the spectral range from 700 to 3000 cm Ϫ1 and from 1.5 to 3.5 eV is used to simultaneously determine phase and microstructure of p...

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In conte...

Successful application of sol-gel, metalorganic decomposition, or hydrothermal routes to ceramic thin films depends on the mechanical integrity of the precursor film. Above a critical thickness, a precursor film will crack or decohere from the substrate during drying. The cracking and thickness of thin metalorganic precursor films were simultaneously observed during drying using a standard opti...

Thin films of boron nitride have been obtained by reactive pulsed laser ablation of a boron target in the presence of a 13.56 MHz radio frequency nitrogen plasma. The films have been deposited at several substrate temperatures, using the on-axis configuration, on WC–Co cutting tools, after Co removal by chemical etching (HClyHNO or HFyHNO ). Diamond polycrystalline 3 3 films of increasing thick...

in this study, tio2 and zno nanofilms were prepared by sol-gel spin-coating method. nanofilms were characterized by x-ray diffraction (xrd), energy dispersive analysis of      x-ray (edx), scanning electron microscopy (sem) and field emission scanning electron microscopy (fe-esm). structural and morphological properties of nanofilms were investigated. the average crystalline size of tio2 and zn...

In this work, the titanium nitride (TiN) thin films were prepared on Si-wafers by using DC reactive magnetron sputtering from a pure target. The influence of N2 flow rates, in range 1.0-4.0 sccm, as-deposited TiN film’s structure was characterized several techniques. (i) crystal structures studied GI-XRD. (ii) thicknesses, microstructures, and surface morphologies analyzed FE-SEM. (iii) element...

Morphology, structure, residual stress, and surface energy of magnetron-sputtered titanium nitride (TiN) thin films, deposited at 300 C with a thickness in the 0.5-1.7 lm range, were characterized. Film microstructure, the origin of residual stress, and its effect on the surface energy were analyzed. The grain size increased with the film thickness. X-ray diffraction showed (200) to (111) prefe...