and Introduction: Thin-film piezoelectric micro-robots could potentially help save human lives with their ability to do reconnaissance in hazardous places, or help avoid costly demolition processes during infrastructure maintenance by utilizing images provided from inconvenient and/or unreachable locations. In order to achieve these goals, there should be an optimized fabrication process for th...

As a microassembly and an encapsulation technique, wafer bonding offers a unique opportunity to combine different materials. Transmission laser bonding not only can satisfy wafer level bonding requirements, but can also be directly implemented into the existing automatic semiconductor fabrication line. In this paper, a laser-induced wafer bonding technique for micro-electro-mechanical systems (...

We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be ap...

Silex Microsystems, a pure play MEMS foundry, offers a high density through silicon via technology that enables MEMS designs with significantly reduced form factor. The Through Silicon Via (TSV) process developed by Silex offers sub 50 μm pitch for through wafer connections in up to 600 μm thick substrates. Silex via process enables “all silicon” MEMS designs and true "Wafer Level Packaging" fe...

Atomic Force Microscopy (AFM), a lithographic technique capable of manufacturing nanometer-sized devices, is a promising alternative to modern lithographic methods. Performing physical simulations to replicate the AFM process is not feasible for large surface simulations, therefore a Monte Carlo approach must be considered. Previous research showed that the physical shape of an oxide dot or wir...

The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annea...

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...

Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated. ©2006 Optical Society of America OCIS codes: (250.5980) Semiconductor optical amplifiers; ...

By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445 0 C to 455 0 C, bonding time is 60s, the void fraction is less than 5%. Glass and silicon wafer bonding quality can achieve the best. The experimental resu...