Substantial increase in gate and sub-threshold leakage of complementary metal-oxide-semiconductor (CMOS) devices is making it extremely challenging to achieve energy-efficient designs while continuing their scaling at the same pace as in the past few decades. Designers constantly sacrifice higher levels of performance to limit the ever-increasing leakage power consumption. One possible solution...

In this letter, we report metal nanocrystal (NC)-based Flash memory devices with single-layer (SL) and dual-layer (DL) Pt NCs as the storage element. The devices are fabricated using CMOS compatible process flow with optimized low-leakage high-k Al2O3 as the control dielectric. Large memory window (10 V for SL and 15 V for DL devices) is observed due to overerase, which increases the overall wi...

A new Wigner-Ville Distribution (WVD) estimation is proposed. This improved and efficient WVD is based on Signal Decomposition (SD) by DCT or DFT Harmonic Wavelet Transform (DCTHWT or DFTHWT) and the Modified Magnitude Group Delay (MMGD). The MMGD processing can be either in fullband or subband. The SD by DCTHWT provides better quality low leakage decimated subband components. The concatenation...

The DRAM cells consist of one or several MOSFET devices and the subthreshold leakage current through the MOSFET strongly depends on the temperature variation. Therefore, it is obvious that the leakage of a memory cell is highly related to temperature variation. The temperature of the circuit can be measured indirectly by using leakage sensors which can be applied to various VLSI circuits becaus...

A novel partial frequency response channel estimator is proposed for OFDMA systems. First, the partial frequency response is obtained by least square (LS) method. The conventional discrete Fourier transform (DFT) method will eliminate the noise in time domain. However, after inverse discrete Fourier transform (IDFT) of partial frequency response, the channel impulse response will leak to all ta...

The effect of gate – drain/source underlap ( Lun ) on a narrow band LNA performance has been studied , in 30 nm FinFET using device and mixed mode simulations. Studies are done by maintaining and not maintaining the leakage current (Ioff) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used...

The signal-to-leakage-and-noise ratio (SLNR) precoder is widely used for MU-MIMO systems in many works, and observed with improved performance from zeroforcing (ZF) precoder. Our work proofs SLNR precoder is completely equivalent to conventional regulated ZF (RZF) precoder, which has significant gain over ZF precoder at low SNRs. Therefore, with our conclusion, the existing performance analysis...