High temperature operation (500 °C and higher) of integrated circuits offers important benefits to harsh environment applications such as aerospace, aeronautics, and energy production. SiC-based electronics are a promising solution to this need for high temperature operation. However, thermally activated degradation of materials used in conjunction with SiC (such as interconnect metals and insu...

Low-cost multijunction photovoltaic devices are the next step in solar energy revolution. Adding a bottom junction with low bandgap material through plasma enhanced chemical vapor deposition (PECVD) processing could potentially provide low-cost boost conversion efficiency. A logical candidate for this is germanium. In work we investigate growth of PECVD processed hydrogenated amorphous/nano-cry...

It is well recognized that the stress of the SiNx layer in GaAs-based device structures can impact the electrical performance and lead to degradation. For GaAs MESFET and HEMT devices, it has been demonstrated not only the magnitude of the stress but also the stress state, compressive or tensile, can affect the performance [1]. Stressinduced failure via microvoid formation in SiNx MIM capacitor...

in this paper, a novel method of producing bi-metallic alloy nanoparticles at low temperatures using hydrogen bombardment of thin films, deposited on glass substrates, is introduced. optical and morphological characteristics of the nanoparticles were extensively studied for various conditions of plasma treatment, such as plasma power density, temperature, duration of hydrogen bombardment, thick...

Nanocrystalline graphite (NCG) layers represent a good alternative to graphene for the development of various applications, using large area, complementary metal-oxide semiconductor (CMOS) compatible technologies. A comprehensive analysis physical properties NCG layers—grown different time periods via plasma-enhanced chemical vapour deposition (PECVD)—was conducted. The correlation between meas...

Amorphous SiO(2) membranes were prepared via a 2-step plasma-enhanced CVD (PECVD) technique at room temperature on porous TiO(2)/Al(2)O(3) substrates. SiO(2) membranes showed molecular sieving properties with a high separation factor for He/N(2) and He/H(2), and high thermal stability, indicating the successful preparation of high-performance membranes at low temperatures.

In recent years, a number of advantages such as modification of nano-crystalline thin films, the ability for low-temperature deposition processes, the controlling of process, as well as high efficiency and repeatability of process, were offered using plasma deposition technique [1]. Silicon carbide (SiC) as a leading candidate for the replacement of Silicon (Si) for hightemperature and power el...

In recent years, a number of advantages such as modification of nano-crystalline thin films, the ability for low-temperature deposition processes, the controlling of process, as well as high efficiency and repeatability of process, were offered using plasma deposition technique [1]. Silicon carbide (SiC) as a leading candidate for the replacement of Silicon (Si) for hightemperature and power el...