One of effort to overcome the planar MOSFET’s limit is super-junction technology in high voltage power MOSFET. This technology can dramatically reduce both on-resistance and gate charge, which is usually a trade-off. With smaller parasitic capacitances, the super-junction MOSFETs have extremely fast switching characteristics and therefore reduced switching losses. Naturally fast switching behav...

INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone devices and as switching devices implemented in a Switch Mode Power Supply (SMPS). The first application note (1) provided a basic description of the MOSFET and the terminology behind the device, including definitions and physical structure. This application note ...

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approved: Gabor C. Temes In this thesis, novel design techniques have been proposed for implementing highlinearity SC circuits in a standard digital CMOS process. They use nonlinear MOSFET capacitors instead of linear double-poly capacitors. To reduce their nonlinearities, a bias voltage is applied to keep MOSFET capacitors in their accumulation regions. For further reduction of distortion, two...

Power electronics devices are made from semiconductor switches such as thyristors, MOSFETs, and diodes, along with passive elements of inductors, capacitors, resistors, integrated circuits. They heavily used in power processing for applications computing, communication, medical electronics, appliance control, converters high DC AC transmission what is now called harmonized AC/DC networks. A con...

In this work, a Euclidean distance calculator is presented. The circuit comprises of simple computing blocks, their basic element being the floating gate MOSFET (FGMOS), exploiting the merits of this device in designing circuits with low-voltage and rail-to-rail operation. Therefore the overall circuit has the characteristics of modularity, low-voltage and rail-to-rail operation under a single ...

In this paper, an analytical quantum correction model for ultrathin oxide MOSFET devices is proposed. With this novel SPICE-compatible model, the gate tunneling current is precisely calculated without any complicated quantum mechanical models. The proposed model is optimized with respect to (i) the position of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) th...

............................................................................................................................... VERSION ABREGEE ............................................................................................................... INTRODUCTION....................................................................................................................1 CHAPTER I M...