نتایج جستجو برای: molecular beam epitaxy
تعداد نتایج: 746525 فیلتر نتایج به سال:
Pulsed laser deposition (PLD) is a popular growth method, which has been successfully used for fabricating thin films. Compared to continuous deposition (like molecular beam epitaxy) the pulse intensity can be used as an additional parameter for tuning the growth behavior, so that under certain circumstances PLD improves layer-by-layer growth. We present kinetic Monte-Carlo simulations for PLD ...
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alig...
In this paper, we review the contributions which MBE (molecular beam epitaxy) has made to the field of GMR (giant magnetoresistance) and interlayer exchange coupling in magnetic multilayers and sandwiches. A historical overview is given and a key advantage of MBE over alternative preparation techniques is emphasized: the ability to probe in situ the growth and structure of these materials. Rece...
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