2D Two dimensional 3D Three dimensional BEOL Back end of line BI Burn-In CMP Chemical mechanical polishing D2D Die-to-die D2W Die-to-wafer ECD Electro-chemical deposition ECG Deleted in chapter EMIB Embedded multi-die interconnect bridge FEOL Front end of line IP Intellectual property KGD Known good die KOZ Keep out zone MCM Multi chip module MCP Multi chip package MEOL Middle end of line MPM M...

In this paper, a kind of multi-disciplinary simulation and design platform for wafer manufacturing process with Chamber system is presented. This platform is developed as an in-house program, with different functional component for multi-disciplinary problems, which can drive the commercial FEM solver with code. There are also management function for user, products, and analysis or optimization...

The influence of change in deposition conditions of silane concentration and substrate temperature on optical properties of hydrogenated microcrystalline silicon thin film samples prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, are investigated. The crystalline volume fraction for the samples determined from Raman spectra are correlated with the silane concentration, su...

We discuss a custom built hybrid physical chemical vapour deposition (HPCVD) system for MgB2 ultra-thin film deposition: construction, deposition process development, and optimization. Achieved films on SiC substrates have a critical temperature (Tc) ranging from 35K (10nm thick films) to 41K (40nm thick films). The 20nm thick unpatterned film had a room temperature resistivity of 13μΩ·cm, wher...

The low-frequency LF noise performance of nand p-channel metal-oxide-semiconductor field-effect transistors MOSFETs with different Hf-based gate oxides, deposited by metallorganic chemical vapor deposition MOCVD on the same interfacial oxide layer and using polysilicon poly-Si as a gate material has been investigated. Independent of the gate oxide, the LF noise spectra of nand p-MOSFETs are pre...