نتایج جستجو برای: integrated optoelectronics

تعداد نتایج: 274598  

2006
C. Barnes M. Ott H. Becker M. Wright A. Johnston C. Marshall H. Shaw P. Marshall K. LaBel D. Franzen

The wide variety of optoelectronics applications in NASA flight systems and instruments require that optoelectronic technologies meet the demanding requirements of the space environment throughout mission life. These requirements vary widely from intense radiation near Jupiter to the very cold temperatures on the Martian surface to the effects of solar flares in Earth orbit. Considerable work h...

Journal: :Nanoscale 2015
Xiang Liu Nianze Liu Mingju Liu Zhi Tao Wenjian Kuang Xiangbing Ji Jing Chen Wei Lei Qing Dai Chi Li Xuehua Li Arokia Nathan

Graphene nanomesh (GNM)-based optoelectronics integrated with quantum dots (QDs) are investigated in this article. The charge transfer mechanism in the QDs/GNM interface is probed in four terminal gated FET-type photodetectors. The insulating ligand is used to make the GNM/ligand/QDs vertically behave like a metal/insulate/semiconductor (MIS) structure to facilitate the charge tunnelling. With ...

2012
Xianzhong Chen Lingling Huang Holger Mühlenbernd Guixin Li Benfeng Bai Qiaofeng Tan Guofan Jin Cheng-Wei Qiu Shuang Zhang Thomas Zentgraf

Surface topography and refractive index profile dictate the deterministic functionality of a lens. The polarity of most lenses reported so far, that is, either positive (convex) or negative (concave), depends on the curvatures of the interfaces. Here we experimentally demonstrate a counter-intuitive dual-polarity flat lens based on helicity-dependent phase discontinuities for circularly polariz...

2013
Helen L. Rogers

FACULTY OF PHYSICAL AND APPLIED SCIENCES OPTOELECTRONICS RESEARCH CENTRE Doctor of Philosophy

Journal: :SAE International Journal of Aerospace 2014

Journal: :Advances in Condensed Matter Physics 2017

Journal: :Nature materials 2003
Janet L Pan Joseph E McManis Thomas Osadchy Louise Grober Jerry M Woodall Peter J Kindlmann

Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaA...

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