The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve reliability IGBTs, various measurements are taken according condition monitoring (CM) technique. Traditional CM techniques include measurement and estimation device operation conditions. Recently, emerging have been developed, not only for detection but also pr...

The objective of this paper is present the data requirements for modeling power electronic devices to aid in modeling power converters for transient simulation studies. The presentation will target applications of power semiconductor devices commonly used in medium to high power applications: insulated gate bipolar transistors (IGBTs), Thyristors (SCR), and Gate TurnOff Thyristors (GTOs) and po...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

In this study, after numerical simulation, a novel snapback-free Shorted-Anode Insulated Gate Bipolar Transistor (SA-IGBT) with Multiple p+/n Collector is proposed and investigated. This structure consists of P+ pillars located on the side collector. The provide high carrier injection efficiency increase anode resistance during turn-on transient, eliminate snapback phenomenon, above all, they a...

Bond wire lift-off is one of the major failure mechanisms in insulated gate bipolar transistor (IGBT) modules. Detecting fault bond wires important to avoid open-circuit IGBT ensure reliable operation power converters. In this paper, we propose a novel fatigue detection method for IGBT, which could be used normal working conditions. Firstly, investigated dependence on heatsink thermal resistanc...

1800A/3.3kV IGBT module with the highest current rating was developed. Advanced Trench HiGT structure was used to achieve low loss characteristics. Module electrical and thermal characteristic were optimized in order to reduce thermal resistance and parasitic inductance. The current ratings of new IGBT module can be increased by 20% from the conventional product type.

In image-guided brachytherapy (IGBT), accurate percutaneous intervention of needle and precise placement radiation sources are challenge tasks. In traditional prostate brachytherapy, needles are introduced through fixed, parallel holes of a template where the maneuverability of the needle is extremely limited. The accuracy and consistency of needle placement and seed delivery is subject to vari...

We present a newly developed 4500 V and 2000 A Press-Pack IGBT module for power transmission and industrial voltage drives applications. The module employs SPT IGBT chips with exceptionally low losses and high Safe Operating Area (SOA). The use of SPT IGBT chips in this Press Pack IGBT module allows for higher power densities and the package provides a highly flexible modular platform with very...