Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

1 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 2 Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720-1460, USA 3 Department of Chemistry, University of California, Berkeley, California 94720-1460, USA 4 Laboratoire de Science et Ingénierie des Matériaux et Procédés (SIMaP), UMR CNRS 5266...

We present a calculation of the single top quark cross section for protonantiproton interactions with √ s = 1.8 TeV at the Fermilab Tevatron collider. We examine the effects of top mass, parton distribution functions, QCD scale, and collision energy, on each of the component production mechanisms, and study the kinematic distributions for standard model electroweak production. At the upgraded T...

Injection nerve palsy (INP) in the median nerve is an iatrogenic peripheral nerve injury that can be inflicted by a faulty intramuscular injection in the median nerve area. The literature reports a 2% incidence of INP among all peripheral nerve injuries. The incidence of INP in developed countries has decreased significantly during the past decade, but the injury appears to remain prevalent in ...

Stimulation of the intracerebral noadrenergic pathway (INP) increases hypothalamic blood flow as measured in conscious rabbits using a 133xenon washout technique. This increase is abolished by the intra-hypothalamic injection of 0.65 micrograms of the muscarinic antagonist atropine and by 5 micrograms of the nicotinic antagonist mecamylamine. Further, 1 micrograms of the cholinomimetic methacho...

Semiconducting, insulating, and metallic nanoparticles have attracted considerable interest due to their size-dependent, quantum confinement characteristics, which make them attractive for a wide range of optical, magnetic, and electronic devices. We report on the deposition of Pd nanoparticles prepared with reverse micellae of water/AOT/isooctane solution on the surface of n-type InP substrate...

In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires QWRs as active zone and aluminum-free waveguides on 001 InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of InP 5 / GaInAs ...

Susanne Albers1 Evripidis Bampis2 Dimitrios Letsios3 Giorgio Lucarelli4 Richard Stotz1 1 Fakultät für Informatik, Technische Universität München {albers, stotz}@in.tum.de 2 Sorbonne Universités, UPMC Univ. Paris 06, UMR 7606, LIP6, Paris, France. [email protected] 3 Université de Nice Sophia Antipolis [email protected] 4 Université Grenoble-Alpes, INP, UMR 5217, LIG, France. giorgio.luca...

The work focuses on understanding and characterization of the thin-film vapor-liquid-solid (TFVLS) growth technique as a low-cost process technology for III-V thin film solar cells on metal/glass substrates. In the last review period, we have focused on understanding and controlling the nucleation events of TF-VLS InP. Furthermore, optoelectronic characterization of the grown InP has been perfo...

We propose and analyze a high-current III-V transistor design using electron transport in the Γand L-valleys of (111) GaAs. Using sp3d5s∗ empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport model, improved drive current is demonstrated using L-valley transport in a strained GaAs channel grown on an (111) InP substrate. At a body thickness of 2 nm t...