The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using metamorphic buffer layers is demonstrated for the first time. In this letter, 80 nm physical gate length depletionmode InGaAs QW transistors with saturated transconductance gm of 930 μS/μm and fT of 260 GHz at VDS = 0.5 V are achieved on 3.2 μm thick buffers. We expect t...

We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure th...

This letter reports on a study of the impact of 110 uniaxial strain on the characteristics of InGaAs high electron mobility transistors HEMT by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of th...

We report results of both strain-driven surface segregation of indium from InGaAs thin films as well as selective area epitaxy of InAs quantum dots using these films. InAs segregation from an underlying InGaAs film allows for preferential growth of quantum dots when additional InAs is deposited. By using standard lithography techniques, a two-step selective growth process for quantum dots is ac...

We propose and demonstrate a purely electrical method for measuring the effective temperature T, of majority carriers under the injection of hot minority carriers. The T, of holes in a thin p-type InGaAs layer, heated by electron injection from an InAlAs layer in a three-terminal lattice-matched heterostructure, was determined by measuring the thermionic emission current of holes over another s...

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher oncurrent, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion...

A self-organized In0.53Ga0.47As/(In0.53Ga0.47As)2(In0.44Al0.56As)2 quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy (MBE). Well lattice-matched and flat cladding layers were grown at a rather high temperature (595 C). Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAs/(InGaAs)2(InAlAs)2 with an amplitude of 2 nm ...

This paper focuses on recent results on the optical properties of self-assembled quantum dots involving typeI InGaAs/GaAs and type-II InP/GaAs interfaces. In the first part, we focus on the InGaAs/GaAs quantum dots, that were used to study the influence of a two-dimensional electron gas on the optical emission of single quantum dots. In the second part, we present the results on type-II InP/GaA...

A monolithic 25 Gbaud DQPSK receiver based on delay interferometers and balanced detection has been designed and fabricated on the hybrid Si/InGaAs platform. The integrated 30 µm long InGaAs p-i-n photodetectors have a responsivity of 0.64 A/W at 1550 nm and a 3dB bandwidth higher than 25 GHz. The delay interferometer shows a delay time of 39.2 ps and an extinction ratio higher than 20 dB. The ...

Ultrafast differential transmission spectroscopy is used to explore temperature-dependent carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Electron-hole pairs are optically injected into the three dimensional GaAs barriers, after which we monitor carrier relaxation into the two dimensional InGaAs quantum wells and the zero dimensional InAs quantum dots by tuning the pr...