High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with firs...

We report measurements of the frequency-dependent dielectric constant of UO, from 4.2 K to above the phase transition at 30 K. The static dielectric constant of 23.6 at 4.2 K is comparable with accepted values at higher temperatures: it is essentially identical in both phases. The effects of undergoing the transition on the dielectric constant are marginal (about 1 I%) and take place in the tem...

This paper reports on a dielectrically actuated and piezoresistively sensed 4.41 GHz silicon bar resonator with an electromechanical Q (Qem) of 8180. The 2-port piezoresistive transconductance measurement performed provides a promising alternative to capacitive measurement at high frequencies, where nominal and feed-through capacitance often dominates the output signal. The electromechanical f·...

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The continuous size downscaling of complementary metal–oxide–semiconductor (CMOS) transistors has led to the replacement of SiO2 with a HfO2-based high dielectric constant (or high-k) oxide, and the polysilicon electrode with a metal gate. The approach to this technological evolution has spurred a plethora of fundamental research to address several pressing issues. This review focusses on the l...

Barium substituted nanocrystalline ferrites with chemical composition BaxCa1-xFe2O4 (x =0.0 to 0.25) BCAF were prepared by solution combustion method. The phase formation of mixed spinal structured ferrites was confirmed by PXRD analysis. The average crystallite size was calculated using Debye-Scherrer formula and it was found to be in the range of 27-44 nm. Surface morphology was analyzed by S...

We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 high-permittivity (high-k) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high s...

Development of High-k Gates for Advances CMOS Devices High dielectric constant (high-k) materials, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), alumina (Al2O3), and their silicates, have drawn a great deal of attention in recent years for potential use as gate dielectrics in advanced CMOS processes [1]. With high dielectric constants, gate dieletrics can be made thicker than SiO2 while...