Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in con...

In this paper, we describe a new approach for fabrication of micromechanical resonators for radio-frequency communication applications. The proposed process provides ultra-narrow lateral gaps using lithographically-defined sacrificial Ge blades. By using Germanium as a sacrificial material, we eliminate the need for HF etching to release mechanical structures and thereby simplify the integratio...

In this work a pack cementation of germanium-doped aluminum and silicon coatings on low alloy steel type-T21 has been applied. This gives significant improvement in the oxidation. Steel-T21 was coated with germanium-doped aluminizing-siliconizing. Diffusion coating was carried out at 1050C for 6 h under an Ar atmosphere by simultaneous germanium-doped aluminizing-siliconzing process. Cyclic oxi...

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused...

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need ...

We study a multilayer silicon-germanium quantum well structure doped with acceptor impurities for resonant-state lasers capable of emitting photons of energy below 4 meV 1 THz . Unlike previous proposals on terahertz lasers in doped silicon-germanium quantum wells, the emitted photon energy does not need to exceed the acceptor binding energy, which is tens of meV. The energy constraint is relax...

The electrodeposition at room temperature of silicon and germanium nanowires from the airand water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germ...

The development of a germanium-based linker system for the solid phase synthesis (SPS) of 3-(n-hexyl)thiophene oligomers and the first SPS of triarylamine oligomers via iterative chain extension is described. The efficiency of the key steps in the oligomer syntheses and their compatibility with the germanium linker are demonstrated by the SPS of bi-[3-(n-hexyl)thiophene] 19 and ter-(triarylamin...

We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 μm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 μm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wave...

Hematite (α-Fe(2)O(3)) is a promising candidate for photoelectrochemical splitting of water. However, its intrinsically poor conductivity is a major drawback. Doping hematite to make it either p-type or n-type enhances its measured conductivity. We use quantum mechanics to understand how titanium, zirconium, silicon, or germanium n-type doping affects the electron transport mechanism in hematit...