We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops imprint for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: 1 stress induced by film/electrode lattice mismatch or clamping, 2 domain pinning induced by, e.g., oxygen vacancies, or 3 degradation of ferroelectric prope...

(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperat...

A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles); (ii) damage during fabrication. These deviations will...

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A thermodynamic formalism is developed to calculate the pyroelectric coefficients of epitaxial ~001! Ba0.6Sr0.4TiO3 ~BST 60/40! and Pb0.5Zr0.5O3 ~PZT 50/50! thin films on ~001! LaAlO3 , 0.29 LaAlO3 :0.35(Sr2TaAlO6) ~LSAT!, MgO, Si, and SrTiO3 substrates as a function of film thickness by taking into account the formation of misfit dislocations at the growth temperature. The role of internal str...

Modern wireless communication systems are based on microwave technologies. Ferroelectric devices with the electric field dependent dielectric properties and low dielectric losses at microwave frequencies are very promising. Capacitance tunability nc, defined as the ratio of the capacitance at zero applied bias voltage to the capacitance at some desired applied voltage, is the key functional pro...