Abstract High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice material due to its biocompatibility, low electrochemical impedance, superior charge injection capacity, corrosion resistance, longevity, stability. Plasma enhanced atomic layer deposition (PE-ALD) a su...

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for production uniform, conformal pinhole free NiO with sub-nanometre control on commercial ALD reactor.

Investigated effects of varying C-rates on stress and structure changes in V2O5. A linear increase in the stress as a function of x in LixV2O5 is observed. C-rate does not directly contribute to larger intercalation stress. A rapid increase in disorder within LixV2O5 is correlated with higher Crate. a r t i c l e i n f o

Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, tr...

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...

I Acknowledgements II Dedication III List of Figures V

The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnS:Mn show that filling fractions .95% can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photon...