Smart power ICs, which monolithically integrate low-loss power devices and control circuitry, have attracted much attention in a wide variety of applications [1], [2]. Commonly used smart power devices are the LDMOS and LIGBT implemented in bulk silicon or SOI (Silicon on Insulator). One of the key issues in the realization of such ‘smart power’ technology is the isolation of power devices and ...

In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nmthick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambient at 850 ◦C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with ...

The dependence of the leakage current in 1.3m InGaAsP buried heterostructure (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two-dimensional device simulator and compared with the electroluminescence (EL) emitted from InP layers. The analysis of the minority carrier flow reveals that the electron current flowing through ...

The Mercury Laser Altimeter (MLA) measured surface reflectance, rs, at 1064 nm. On Mercury, most water-ice deposits have anomalously low rs values indicative of an insulating layer beneath which ice is buried. Previous detections of surface water ice (without an insulating layer) were limited to seven possible craters. Here we map rs in three additional permanently shadowed craters that host ra...

In this work we investigated the diffusion and clustering of supersaturated substitutional carbon in 200 nm thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambients at 850 C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with r...