Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic differences in their g factors. B...

Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and one superconducting (niobium titanium nitride) electrode. Gate voltages vary electron density and define a tunnel barrier between normal an...

First investigations of photoacoustic (PA) spectroscopy (PAS) of methane using an antimonide semiconductor laser are reported. The laser fabrication is made in two steps. The structure is firstly grown by molecular beam epitaxy, then a metallic distributed-feedback (DFB) grating is processed. The laser operates at 2371.6 nm in continuous wave and at room temperature. It demonstrates single-mode...

Magnetized electron columns are a valuable experimental tool used to study two-dimensional ~2D! fluid phenomena. Traditionally, the electrons have been generated with thermionic sources, typically limiting the initial electron distribution to one filled circle and thereby restricting the range of accessible fluid phenomena. Here, we describe a new electron source based on a cesium antimonide ph...

Compressively strained 2 m GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T0=140 °K for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T0 of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 m wavelength. A room-temperature threshol...

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was meas...