The efficiency of organic light-emitting devices is significantly influenced by the performance of the electroninjecting contact. Lowering the energetic barrier between the metal contact and the lowest unoccupied molecular orbital of the adjacent organic electron transport layer should facilitate the injection of negative charge carriers, and, thus, improve the electroluminescence yield by incr...

Capacitance-Voltage (CV) measurements along with the Mott-Schottky (MS) analysis are widely used for characterization of material and device parameters. Using a simple analytical model, supported by detailed numerical simulations, here we predict that the capacitance of thin film devices scale as V (V is the applied potential), instead of the often used V dependence of MS analysis – with signif...

HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) far infrared detectors based on the GaAs/AlGaAs material system have shown promise for operation at wavelengths up to a few hundred microns. HEIWIP detectors with GaAs emitters have been shown to operate out to 92 lm. Recent modifications to use AlGaAs emitters have extended the zero response threshold out to 128 lm. Extens...

The field emission characteristics of individual Mo emitters were measured before and after diamond deposition, as well as before and after annealing. After coating without annealing, the emission current increased dramatically. Subsequent annealing resulted in further increases in emission and improved current stability. After coating, the energy distribution of the emitted electrons was found...

China-US Workshop on Materials Science 02 POROUS FRAMEWORKS BASED ON INDIUM AND ORGANIC LIGANDS Maochun Hong Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences, China May 23 – 25, 2005, Institute of Physics, Chinese Academy of Sciences, BEIJING, CHINA 2 China-US Workshop on Materials Science Abstract 03 METAL-ORGANIC FRAMEWORKS AND POLYHEDRA (MOFS AND MOPS): NEW...