The present work consists of designing a Single Balanced Mixer (SBM) with the 65 nm CMOS technology, this for a 1.9 GHz RF channel, dedicated to wireless applications. This paper shows; the polarization chosen for this structure, models of evaluating parameters of the mixer, then simulation of the circuit in 65nm CMOS technology and comparison with previously treated.

A digital system is proposed for low power 100channel neural recording system in this paper, which consists of 100 amplifiers, 100 analog-to-digital converters (ADC), digital controller and baseband, transceiver for data link and RF command link. The proposed system is designed in a 0.18 μm CMOS process and 65 nm CMOS process. Keywords—multiplex, neural recording, synchronization, transceiver

The design of a low noise figure (NF), high conversion gain (CG) double-balanced, Gilbert-cell mixer is presented. Since the noise figure of the RF CMOS mixer is strongly affected by flicker noise (1/f), a dynamic current injection technique is used to reduce the flicker noise corner frequency. The current injection circuitry comprises 3 pMOS to inject current pulses at the switching instants. ...

In this paper a low power CMOS sub-harmonic mixer based on the Gilbert cell for 2.4 GHz ISM band application is presented, in which the position of the switching and transconductance stages of mixer has been exchanged. A tuning out inductor has been used between the RF and LO switching stages to improve the linearity and noise figure, and also to enhance the conversion gain of the Mixer. The ut...

This paper represents a 3.5 GHz narrow band differential LNA novel design for the improvement and reliability in 180μm CMOS technology. A 3.5 GHz proposed LNA designed structure is a fully integrated 3GHz high gain narrow band LNA by using differential cascode technique with modified inductive degenerated topology. The low power high gain, less noise, CMOS LNA is designed for wimax applications...

This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 m 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) ...

Recently, battery-operated wireless communication systems with low power consumption and high sustainability on operating time for batteries have wide applications. In these systems, low-power CMOS RF ICs are the key components for achieving system performance goals. One effective means of reducing power dissipation is to decrease supply voltage. Moreover, as CMOS technology moves below 100 nm,...

RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in near future. Experimental proof concept that outperformed Si CMOS at 130 nm has already been achieved with a vast potential improvements. This review compiles and compares different CNT integration technologies, results as well demonstrated circuits. Moreover, it suggests approaches to enhance perfor...

This paper presents a wireless EEG acquisition system powered by a thermoelectric energy scavenger, which was optimised to convert the small thermal power available in the human-body. The wireless EEG system is composed with up to four EEG electrodes. A radio-frequency (RF) transceiver for operation in the 2.4 GHz ISM band, was optimised and fabricated in the UMC RF 0.18 μm CMOS process. The re...

X-parameters are developed as a superset of S-parameters and they are suitable for modeling systems having only radio-frequency (RF) and DC ports. For a polar power amplifier (PA), the envelope of the input modulated signal is applied at the envelope port, which is neither an RF nor a DC port. In this case, X-parameter may fail to characterize the behavior of the envelope path and consequently ...