Keywords: RF MEMS capacitive switch Dielectric charging Silicon nitride PECVD method a b s t r a c t The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that produces the plasma in PECVD method on t...

TiO2 is a promising photocatalyst, but its large bandgap restricts light absorption to the ultraviolet region. The addition of noble metals can reduce and electron-hole recombination; therefore, we prepared TiO2-Ag nanoparticle composite films by plasma-enhanced chemical vapor deposition (PECVD) using mixture aerosolized AgNO3, which was used as Ag precursor, titanium tetraisopropoxide, acted p...

To obtain reliable 3D stacking, a void-free bonding interface should be obtained during wafer-to-wafer direct bonding. Historically, SiO 2 is the most studied dielectric layer for applications, and it reported to form voids at interface. Recently, SiCN has raised as new candidate layer. Further understanding of mechanism behind void formation would allow avoid on different dielectrics. In this ...

PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reducti...

A commercial plasma enhanced chemical vapor deposition (PECVD) technique with planetary substrate rotation was used to apply a thin (200-400 nm thick) conformal diamond-like carbon (DLC) coating (known as a diamond-like nanocomposite (DLN)) on LIGA fabricated Ni-Mn alloy parts. The PECVD technique is known to overcome the drawbacks associated with the line-of-sight nature of physical vapor depo...

PECVD growth of Six:Ge1-x films for high speed devices and MEMS SiGe thin films were deposited by plasma enhanced chemical vapor deposition (PECVD; MV Systems, Colorado) for use in high speed devices, Micro-Electrical Mechanical Systems (MEMS) and measurement of electromagnetic radiation (bolomtery). SiGe films grown by PECVD typically have lower stress, lower deposition temperatures and high g...