advection-diffusion equation and its related analytical solutions have gained wide applications in different areas. compared with numerical solutions, the analytical solutions benefit from some advantages. as such, many analytical solutions have been presented for the advection-diffusion equation. the difference between these solutions is mainly in the type of boundary conditions, e.g. time pat...

Implanted fluorine is observed to behave unusually in silicon, manifesting apparent uphill diffusion and reducing diffusion and enhancing activation of boron. In order to investigate fluorine behavior, we calculate the energy of fluorine defect structures in the framework of density functional theory. In addition to identifying the ground-state configuration and diffusion migration barrier of a...

This article proposes a new modified anisotropic diffusion scheme for automatic defect detection in radiographic films. The new diffusion method allows to enhance, to sharpen anomalies, and to smooth the background of the image. This new technique is based on the modification of the classical diffusion rule by using a nonlinear sigmoidal function. Experimental results are carried out on multipl...

We measure diffusion coefficients in the lamellar phase of the nonionic binary system C(12)EO(6)/H(2)O using fluorescence recovery after photobleaching. The diffusion coefficient across the lamellae shows an abrupt increase upon approaching the lamellar-isotropic phase transition. We interpret this feature in terms of defects connecting the surfactant structure. An estimation of the defect dens...

We have developed an atomistic model for dopant diffusion in SiGe structures and we have implemented it in the kinetic Monte Carlo process simulator DADOS. The model takes into account (i) composition and stress effects on the diffusivity of interstitials, vacancies and dopants, (ii) SiGe interdiffusion, (iii) dopant segregation and (iv) the modifications of band-gap and charge levels. The mode...

acceptance of information and information diffusion are the traditional concepts that can be reviewed from another point of view. acceptance of innovation and innovation diffusion model are starting points for analyzing these concepts. these concepts have an important role in designing systems and popularization of sciences. in addition, it is considerable in library and information studies whi...

Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet ma...

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from ...

Amsl i tude Dependent Internal Friction has been measured from 77 K to 593 K in FlgO single crystals p las t ica l ly deformed a t room tenperature . Experiiioental resul ts have been tested w i t h several theoretical nodels of dislocation breakaway. A re1 iable value of interaction energy (0.5 eV) i s deduced fro111 the aodel of Teutonico, Granato and LGcke, b u t only a part ial agreement be...