Amorphous SiO(2) membranes were prepared via a 2-step plasma-enhanced CVD (PECVD) technique at room temperature on porous TiO(2)/Al(2)O(3) substrates. SiO(2) membranes showed molecular sieving properties with a high separation factor for He/N(2) and He/H(2), and high thermal stability, indicating the successful preparation of high-performance membranes at low temperatures.

In recent years, a number of advantages such as modification of nano-crystalline thin films, the ability for low-temperature deposition processes, the controlling of process, as well as high efficiency and repeatability of process, were offered using plasma deposition technique [1]. Silicon carbide (SiC) as a leading candidate for the replacement of Silicon (Si) for hightemperature and power el...

In recent years, a number of advantages such as modification of nano-crystalline thin films, the ability for low-temperature deposition processes, the controlling of process, as well as high efficiency and repeatability of process, were offered using plasma deposition technique [1]. Silicon carbide (SiC) as a leading candidate for the replacement of Silicon (Si) for hightemperature and power el...

Abstract Unprotected copper conductors are prone to oxidation and corrosion, especially when in contact with salt water or at high temperature. In this study, we compared commercially available coating graphene oxide plasma-enhanced chemical vapor deposition (PECVD) coated wires terms of antioxidation anticorrosion protection. Samples were subjected aging tests a spray chamber. Thereafter, both...

Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 squar pixels with 380 lm pitch based on a n–i–p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. Th deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using bet particles from Ni...

Techniques for cost-efficient operation of SiNx:H systems with a capability for hydrogen passivation in a manufacturing environment are analyzed. We conclude that SiNx:H performance may be optimized by a variety of techniques, and that the cost and productivity of the deposition tool may be the determining factors in the industry’s decision for a particular technique. PECVD constitutes the curr...

Due to its outstanding chemical stability and mechanical properties, silicon carbide (SiC) is one of the best materials for harsh environment applications. In this work, bulk micromachining technique was utilized to fabricate a PECVD SiC pressure sensor. This technique simplified the process and solved the stickiness problem in surface micromachining. The whole fabrication temperature is under ...