We present a model describing the dynamics of a thermally activated nanoelectromechanical device. The nanosystem consisted of two coaxial carbon nanotubes of disparate lengths. The presence of strong thermal inhomogeneities induced motion of the shorter nanotube along the track of the longer nanotube. A model combining the actions of frictional, van der Waals, and thermal forces and the effects...

An all-fiber passive laser mode locking is realized with a vertically aligned single-walled carbon nanotube film that can be transferred onto an arbitrary substrate using only hot water. A D-shaped fiber is employed as the substrate for the evanescent field interaction of propagating light with the nanotubes. The scheme highlights the efficient interaction achieved by the nanotube alignment as ...

We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the complex admittance of the double quantum dot as a function of the energies of the single-electron states. The measurements are found to be in good agreement wi...

Suspended single-walled carbon nanotube devices comprised of high-quality electrical contacts and two electrostatic gates per device have been prepared. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis related to environmental factors and act as cleaner Fabry-Perot interferometers or single-electron transistors. The high-field saturation currents in th...

The electron transport properties of a very long (20 micron) CVD-grown nanotube are reported. In this device the transport is dominated by intrinsic scattering processes at room temperature. The room temperature hole mobility is 20,000 cm/Vs, exceeding that of technologically-relevant semiconductors. The mobility increases with decreasing temperature, and is estimated to be greater than 180,000...

In this study we investigate the effect of atoms such as B, N, Ge and Sn on the optical and the electrical properties of capped (5, 0) zigzag carbon nanotube, using DFT calculation method. These elements were attached to the one end of the carbon nanotube. We considered four different structure designs as possible candidates for a p-n junction device. The electrical properties of these structur...

We present a quantum and classical theory of electronic devices with one–dimensional (1D) channels made of a single carbon nanotube or a semiconductor nanowire. An essential component of the device theory is a self–consistent model for electrostatics of 1D systems. It is demonstrated that specific screening properties of 1D wires result in a charge distribution in the channel different from tha...

A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowir...

Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the perfor...

The paper reviews current theoretical methods to study quasi–electrostatic phenomena in single–wall nanotube systems. Several models are presented to demonstrate importance of selfconsistent calculation of the electric fields for electronic device applications. The quantum mechanical formalism of the dielectric function is chosen to obtain the selfconsistent solution. It gives a unified approac...