An alternative version of Chua’s oscillator is obtained using a cubic-like nonlinearity [2], which is implemented with two CMOSFET transistors. We propose a modification of this implementation that allows to change the shape of the characteristic in an easy way. A mathematical model of the circuit is derived based on the equations of MOSFET transistors [3] and a Chua’s circuit is simulated usin...

The limits on scaling suggest the technology advancement for the solid-state devices. The double-gate (DG) MOSFET has emerged as an alternative device structure due to the certain significant advantages, i.e. increase in mobility, ideal sub-threshold slope, higher drain current, reduced power consumption and screening of source end of the channel by drain electric field (due to proximity to the...

In this paper, a low dropout (LDO) circuit based on curvature compensation benchmark and closed-loop stability is designed. This compensates for the higher order term of VBE in BJT through subthreshold characteristic MOSFET achieves effect compensation. The bandgap reference provides stable input voltage LDO circuit, while source follower adaptive bias improve response speed circuit. temperatur...

Whenever devices are operated in parallel, due consideration should be given to the sharing between devices to ensure that the individual units are operated within their limits. Items that must be considered to successfully parallel MOSFETs are: gate circuitry, layout considerations, current unbalance, and temperature unbalance. This application note covers these topics and provides guidelines ...

Important features of a deep-submicron MOSFET drain current model capable of supporting both digital and analog circuit simulations are described. Formulation of the commonly used mobility and velocity saturation models have to be revised to account for the influnce of the higher clecttic field in deep-submicron devices. For analog circuit simulations, output resistance modeling and smooth tran...

Analysis of 1 noise in MOSFET circuits is typically performed in the frequency domain using the standard stationary 1 noise model. Recent experimental results, however, have shown that the estimates using this model can be quite inaccurate especially for switched circuits. In the case of a periodically switched transistor, measured 1 noise power spectral density (psd) was shown to be significan...

Despite the significance of matched devices in analog circuit design, mismatch modeling for design application has been lacking. This paper addresses misconceptions about MOSFET mismatch for analog design. t mismatch does not follow a simplistic 1 ( area) law, especially for wide/short and narrow/long devices, which are common geometries in analog circuits. Further, t and gain factor are not ap...

This paper describes the development of high voltage power supply for electro-optics applications. The power supply consists of MOSFET driver, voltage multiplier circuit and voltage controller. A single timer 555 generates 1.3 kHz square pulse to drive the power MOSFET that connected to a standard step up transformer. By using voltage multiplier technique, the output from secondary transformer ...

Absrracl A highly linear CMOS RF amplifier and mixer circuits adopting MOSFET transconductance linearization bv linearlv suoemosine several commonTherefore it is very important to linearize MOSFET transconductance for both RF amplifier and mixer circuits. We have shown that multide eated transistor (MGTR) 111 ~ _ . source FET transistors in parallel, combined with some additional circuit techni...

In this paper an attention is paid to the existence of parasitic elements in a typical n-channel MOSFET devices that are often employed in sub-THz detectors and the role they play in when such devices are employed at sub-THz frequencies. An effective circuit model of such a structure was constructed. The most of the effort was put to investigate the influence of the layout of the MOSFET’s Gate ...