Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 near polar instability shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth high quality thin films by molecular-beam epitaxy. Tantalum was provided both suboxide source emanating TaO2 flux from Ta2O5 contained conventional e...

We present a wavelet analysis of coarsening of mounds during molecular beam epitaxy. The advantage in using wavelets over Fourier analysis is that one can track the coarsening process in both, location (direct space) and frequency (or scale) space at the same time. The wavelets concise scale decomposition allows the discrimination of the coarsening process, i.e. tracking coarsening at different...

Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si„001... T. Spila, P. Desjardins, A. Vailionis, H. Kim, N. Taylor, D. G. Cahill, and J. E. Greene Department of Materials Science and the Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois...

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.

Sining Dong,1 Xinyu Liu,1 Xiang Li,1 Vasily Kanzyuba,1 Taehee Yoo,1,2 Sergei Rouvimov,3,4 Suresh Vishwanath,3,5 Huili G. Xing,3,5,6 Debdeep Jena,3,5,6 Margaret Dobrowolska,1 and Jacek K. Furdyna1 1Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA 2Department of Physics, Korea University, Seoul 136-701, South Korea 3Department of Electrical Engineering, University o...

We studied the themal quenching of the self-activated (SA) band of molecular beam epitaxy (MBE) grown ZnSe:Cl thin films by means of temperature dependen1 photo~uminescence (PL) experiments. We analyzed the spectra of the self-activated (SA) band as a function of temperature and C1 concentration. Al1 studied samples presented the emission of this band, however, the excitonic emission was observ...

We report on the Ag M4,5N4,5N4,5 Auger lineshape variation which occurs during the epitaxial growth of Ag onto GaAs { 001 } layers grown in situ by MBE (molecular beam epitaxy). This variation depends strongly on the mode of growth of the metallic layer. We suggest that it is due to a solid-state effect which acts progressively in the case of a layer-by-layer (2 D) growth and more rapidly when ...