In very large scale integrated (VLSI) circuit design, shrinking transistor feature size using advanced lithography techniques has been a holy grail for the whole semiconductor industry. However, the gap between the manufacturing capability and the design expectation becomes more and more critical for sub-28nm technology nodes Under the constraint of 193nm wavelength lithography, advanced circui...

Nanosphere lithography (NSL) has been studied as the effective method of fabricating nano-scale array. This paper presents template-assisted NSL to obtain high-quality crystal in regularity and coverage. A periodic array of 100 nm deep nano trenches with two different widths, 400 and 450 nm was fabricated by nano imprint lithography (NIL), and used as the template. When polystyrene nanospheres ...

in this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. in order to define silicon nanostructures, metal-assisted chemical etching (mace) was carried out with silver catalyst. provided solution (or materiel) in combination with laser interference lithogr...

Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies ...

Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL p...