Silicon based high power devices continue to play an enabling role in modern high power systems, especially in the fields of traction, industrial and grid applications. Today, approximately 30 years after its invention, a Bipolar-MOS “BiMOS” controlled switch referred to as the Insulated Gate Bipolar Transistor IGBT is the device of choice for the majority of power electronics converters with p...

Adjustable Speed AC Drive (ASD) manufacturer’s recently migrated from Bipolar Junction Transistor (BJT) semiconductors to Insulated Gate Bipolar Transistors (IGBTs) as the preferred output switching device. The advantage of IGBTs is that device rise / fall time switching capability is 510 times faster, resulting in lower device switching losses, a more efficient and smaller drive package. Howev...

Ming Ren 1, Chongxing Zhang 1, Ming Dong 1,*, Rixin Ye 1 and Ricardo Albarracín 2 1 State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China; [email protected] (M.R.); [email protected] (C.Z.); [email protected] (R.Y.) 2 Department of Electrical, Electronics and Automation Engineering and Applied Physics, Polytechnic U...

The RF source High Voltage Converter Modulator (HVCM) systems installed on the Spallation Neutron Source (SNS) have operated well in excess of 200,000 hours, during which time numerous failures have occurred. An improved Insulated Gate Bipolar Transistor (IGBT) switch plate is under development to help mitigate these failures. The new design incorporates two significant improvements. The IGBTs ...

A high-power low-distortion static var compensator based on a synchronous link converter has been proposed, where the harmonics are eliminated by incorporating a low-power insulated-gate-bipolar-transistor-based controlled current auxiliary converter in conjunction with a high-power gate-turn-off-thyristor-based converter. In this paper, a new load compensator based on this topology is proposed...

The Bi-mode Insulated Gate Transistor BIGT is a single chip reverse conducting IGBT concept, which is foreseen to replace the standard IGBT / Diode two chip approach in many high power semiconductor applications. Therefore, it is necessary to understand in detail the design challenges and performance trade-offs faced when optimizing the BIGT for different application requirements. In this paper...

An availability and a reliability prediction has been made for a high-voltage direct-current (HVDC) module of VSC (Voltage Source Converter) containing DC/DC converter, gate driver, capacitor and insulated gate bipolar transistors (IGBT). This prediction was made using published failure rates for the electronic equipment. The purpose of this prediction is to determinate the additional module re...