نتایج جستجو برای: inp

تعداد نتایج: 4104  

2011
Ryan Gresback Ryan Hue Wayne L Gladfelter Uwe R Kortshagen

Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standa...

1996
Alfons Dehé Hans L. Hartnagel E. Kuphal

We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electric...

2015
Christian Caspers Koki Takanashi

Wedemonstrate opto-spintronics using Fe-doped IndiumPhosphide (InP). Themethod is based on optical orientation of InP conduction electron spinswhich are electrically detected in planar InP/ oxide/Ni tunnel spinfilters.We separate the optical excitation from electrical detection, avoiding thus additional interactions of photonswith the ferromagnet. Interface engineering provides a surface iron a...

Journal: :Indian journal of experimental biology 2011
Mohammed A A Sarhan Mustaffa Musa Zainul F Zainuddin

Expressing proteins of interest as fusion to proteins of bacterial envelope is a powerful technique for biotechnological and medical applications. The synthetic gene (VacII) encoding for T-cell epitopes of selected genes of Mycobacterium tuberculosis namely, ESAT6, MTP40, 38 kDa, and MPT64 was fused with N- terminus of Pseudomonas syringae ice nucleation protein (INP) outer membrane protein. Th...

Journal: :Proceedings. Mathematical, physical, and engineering sciences 2016
Fateen Zafar Azhar Iqbal

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...

2006
J. Zhao Z. C. Feng Y. C. Wang J. C. Deng G. Xu

InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...

2016
Liang Zhao Zuoxing Guo Qiulin Wei Guoqing Miao Lei Zhao

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protru...

2014
JOHANN C. RODE HAN-WEI CHIANG PRATEEK CHOUDHARY VIBHOR JAIN BRIAN J. THIBEAULT WILLIAM J. MITCHELL MARK J. W. RODWELL MIGUEL URTEAGA DMITRI LOUBYCHEV YING WU JOEL M. FASTENAU AMY W. K. LIU

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triplemesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocy...

2011
Ping Du Maoke Chen Akihiro Nakao

In-network processing (INP) is being used to cope with the large volume of data streams that need to be analyzed in real-time of data transmission rather than being stored and computed by powerful servers. In this paper, we combine the programmable switch OpenFlow with network virtualization and design the INP platform OFIAS, i.e., OpenFlow In A Slice. With the flexibility of OpenFlow and the s...

2009
A. del Alamo Yuji Awano

InAlAs/InGaAs Modulation-Doped Field-Effect Transistors (MODFETs) on InP have recently emerged as an optimum choice for a variety of microwave and photonics applications. This is because the outstanding transport properties of InGaAs have yielded devices with very low-noise and high-frequency characteristics. Unfortunately, the low breakdown voltage of InAlAs/InGaAs MODFETs on InP (typically le...

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