InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source sa...

In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well ~MQW! modulators. We examine GaAs buffer layers and linearly graded InGaAs buffer layers. Our results indicate that for lower indium concentrations in the quantum wells ~less than about 23%! better device performance and surface morphology are o...

We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-mum wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temp...

We propose a method f o r c o n t r o l l i n g t h e f l a t b a n d v o l t a g e of a GaAs S I S (Semiconductor-Insulator-Semiconductor) diode i n which we use InGaAs a s t h e ga te material. We examine i ts ef fec t iveness by capacitance-voltage measurement. Thermal s t a b i l i t y of InGaAs-gate SIS diode i s a l s o studied.

The structure and magnetic properties of an InGaAs/Fe(3)Si superlattice in a cylindrical geometry are investigated by electron microscopy techniques, x-ray diffraction and magnetometry. To form a radial superlattice, a pseudomorphic InGaAs/Fe(3)Si bilayer has been released from its substrate self-forming into rolled-up microtubes. Oxide-free interfaces as well as areas of crystalline bonding ar...

Abstract We fabricated surface-emitting quantum cascade lasers with photonic crystal resonators whose active layers were strain-compensated InGaAs/AlInAs multiple wells to operate at 4.3 μ m. tested two kinds of square-lattice crystals consisting circular and pentagonal InGaAs cylinders as a unit structure. examined their output power far-field pattern find that both them improved by lowering t...

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

In this paper we propose a microwave detector based on a AlGaAs/ InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitr...

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strainrelaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content....

We recently determined the values of intrinsic spin-orbit (SO) parameters for In0.52Al0.48As/In0.53Ga0.47As(10 nm)/In0.52Al0.48As (InGaAs/InAlAs) quantum wells (QW), lattice-matched to (001) InP, from the weak localization/antilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the subband energy spectra for the InGaAs/InAlAs double QW system...