We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

By monitoring the nonlinear absorption of picosecond laser pulses as a function of lattice temperature, we identify four-photon absorption in bulk InAs. Optical bandgap scaling of this process is consistent with a calculation obtained from fourth-order perturbation theory for allowed–allowed–allowed–forbidden transitions. A model of nonlinear absorption based on laser-induced impact ionization ...

A theoretical model for subnanosecond evolution of a nonequilibrium, inhomogeneous free-electron gas in a laser filament or microfilament wake channel is presented. The spatial distributions of electron density and temperature calculated in axially symmetric geometry as a function of time reveal dynamics on the picosecond time scale that is principally driven by a combination of thermal conduct...

The time-dependent close-coupling method is applied to calculate the electron-impact ionization of a diatomic molecule with interior closed subshells. The ionization of the outer 2sσ subshell of Li2(1sσ 22pσ 22sσ 2) is carried out using a standard core orthogonalization method. At the peak of the Li2 cross section, the nonperturbative time-dependent close-coupling cross sections are found to be...

In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulat...

The ultrafast radiation damage begins with photoionization, followed by impact ionization by photoand Auger electrons. The ionization of atoms develops with time, ultimately causing lattice disorder and Coulomb explosion of the crystal. Due to very short pulse duration, it has been proposed that diffraction can be recorded before significant structural changes occur. This has been termed “diffr...

Evaporated ZnS:Mn alternating-current thin-film electroluminescent ~ACTFEL! devices are assessed via frequencyand temperature-dependent transferred charge analysis. The frequency-dependent trends involve the threshold voltage and the slope of the transferred charge immediately above threshold, both of which increase with increasing frequency. At ;15–20 V above threshold, the slope of the transf...

We have measured electron impact ionization for Fe from the ionization threshold up to 1200 eV. The measurements were performed using the TSR heavy ion storage ring. The ions were stored long enough prior to measurements to remove most metastables, resulting in a beam of 94% ground-level ions. Comparing with the previously recommended atomic data, we find that the Arnaud & Raymond cross section...

A kinetic model of partially ionized complex plasmas is employed for the numerical analysis of low-frequency longitudinal modes for typical laboratory plasmas. The approach self-consistently includes the effects of plasma particle absorption on dust, collisions with neutrals and electron impact ionization. In addition to the typical dust acoustic mode, the results reveal the existence of a nove...